Silicon carbide (SiC) is an important abrasive due to its high hardness, but its application range exceeds that of ordinary abrasive. For example, due to its high-temperature resistance and thermal conductivity, it has become one of the preferred materials for tunnel kilns or shuttle kilns, and its electrical conductivity makes it an important electrical heating element.

Silicon carbide was established in 1891 by American Acheson fused diamond experiment, accidentally discovered a carbide in the laboratory, was mistaken for diamond mixture, hence the name emery, Acheson study out 1893 industrial smelting silicon carbide method, namely we often say that Acheson furnace, has been in use today, with the carbon materials for furnace core body resistance furnace, electric heat quartz SIO2 mixture formation of silicon carbide and carbon.

A couple of things about silicon carbide

1. Silicon carbide was first discovered in meteorites in 1905.
2. 1907 the first silicon carbide crystal light-emitting diode was born.
3. In 1955, a major breakthrough in theory and technology, LELY put forward the concept of growing high-quality carbonization, and from then on, SiC was used as an important electronic material.
4. 1958 the first world silicon carbide conference was held in Boston for academic exchange.
5. Silicon carbide was mainly studied in the Soviet Union in the 1960s and 1970s.
6. By 1978, the "LELY improved technology" was adopted for the first time to purify and grow grains.
7. 1987 ~ present: established silicon carbide production line based on the research results of CREE, and suppliers began to provide commercial silicon carbide base.