Data of XRD

The compositional information of ITO can be obtained from XRD spectra, in which the peak position implies different diffraction plane, and the peak intensity ratio gives out the elemental relative content ratio. In ITO, certain positions are substituted by and SnO₂ crystal forms in original crystal. Their crystal structures are different and thus their peak positions are different. The more amount of certain components, the stronger the peaks. So, the atomic ratio of Indium (In), Tin (Sn), Oxygen (O), and Carbon (C) can be calculated based on the intensity of peaks.

Fig. 1. XRD spectrum of ITO with different wt% of Sn.[1]

The Sn substitution causes the change in crystal structure and forms the second phase of SnO₂ in the original. The amount of Sn and In can be calculated based on the intensity of peaks. The precision of the result is dependent on the process of peak-splitting and peak area integration. As shown in figure 1, the existence of Sn can be detected when wt% of Sn exceeds 10 wt%. This value is lower than the doping ratio in industrial manufacturing^[2], so XRD is accurate enough for characterization. In conclusion, XRD can give quantitative information about the composition of ITO material.

Reference:

[1] Kőrösi, L., etc. (2011). Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method. Thin Solid Films, 519(10), 3113-3118.

[2] Bhuvaneswari, S., etc. (2021). Fabrication and characterization of p-Si/n-In2O3 and p-Si/n-ITO junction diodes for optoelectronic device applications. Surfaces And Interfaces, 23, 100992.

Transparent Conductive Film

Transparent Conductive Film

3. Characterization Data

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